Fig. 13: Bandgap engineering in BP-based alloys.
From: Photoluminescence as a probe of phosphorene properties
a Structure and exfoliation of layered b-AsP. b Summary of x-dependent bandgaps of b-AsxP1−x. The thickness of the b-AsP flakes is >30 nm in these IR measurements. The figure was reproduced with permission from ref. 167. Calculated band structures of As1-xPx system: c pristine phosphorene (x = 1), d As0.25P0.75, e β-As0.5P0.5, f As0.75P0.25, g pristine arsenene (x = 0). The black line presents ML and the red lines BL. The figure was reproduced with permission from ref. 168. VBM and CBM of h Sb0P1 (α-phosphorene), i Sb0.25P0.75, j Sb0.5P0.5, k Sb0.75P0.25, and l Sb1P0 (α-antimonene) monolayers, respectively. m Variation tendency of valence band state A, C, and conduction band states B and D–F. The yellow area represents that it is a direct bandgap semiconductor in this proportion range, and the dark yellow area is the indirect bandgap. The figure was reproduced with permission from ref. 169.
