Fig. 1: Device structure and dry electrical characteristics. | npj 2D Materials and Applications

Fig. 1: Device structure and dry electrical characteristics.

From: Super-Nernstian ion sensitive field-effect transistor exploiting charge screening in WSe2/MoS2 heterostructure

Fig. 1

a Schematic of the WSe2(top)/MoS2(bottom) ISFET device, b optical image, showing the WSe2 on MoS2 along with the metal contacts (scale bar 10 μm), c HR-TEM of the channel region of HfO2/WSe2(top)/MoS2(bottom)/HfO2 stack (scale bar 5 nm), and d transfer and e output characteristics of the ISFET measured in the dry environment.

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