Fig. 2: Multistate memory characteristics of vdW photoelectroactive synapse.
From: Photoelectroactive artificial synapse and its application to biosignal pattern recognition
a Negative threshold voltage (Vth) shift characteristics controlled by optical spikes under negative voltage bias. b Positive Vth shift characteristics controlled by optical spikes under positive voltage bias. c Cycle-to-cycle variations in Vth with the optical spikes under various Vwrite values. d Retention characteristics of the modulated Vth. e Negative Vth shift in response to five consecutive co-stimuli spikes. f Interpretation of (e) in terms of the synaptic weight modulation with respect to the number of co-stimuli. All Vth values were extracted from positive gate sweep data.
