Table 1 Input parameters and calculated characteristics of excitons, their interactions, and the biexciton.

From: Symmetry-dependent exciton-exciton interaction and intervalley biexciton in monolayer transition metal dichalcogenides

 

MoSe2

MoS2

WS2

WSe2

μr (m0)33

0.350

0.275

0.175

0.200

r0 (Å)33

39

34

34

45

Freestanding MLs

Eb (meV)

620

644

566

481

ax (Å)

8.38

8.96

11.48

12.11

\({U}_{\Gamma -\Gamma }^{ex}\) (\({E}_{b}{a}_{x}^{2}\))

2.043

2.173

2.341

2.187

\({U}_{{\Gamma }_{2}-{\Gamma }_{3}}^{ex}\) (\({E}_{b}{a}_{x}^{2}\))

0.952

0.863

0.602

0.539

\({{{{\mathcal{E}}}}}_{0}\) (meV)

64.9

53.4 (6012)

18.5

12.9

hBN encapsulated MLs

κ33

4.4

4.45

4.35

4.5

Eb (meV)

226 (23133)

215 (22133)

174 (18033)

157 (16732)

ax (Å)

10.38

11.53

15.39

15.69

\({{{{\mathcal{E}}}}}_{0}\) (meV)

24.0 (2127)

13.2

1.5

1.4 (16–1718)

  1. Available appropriate experimental measurements of the exciton and biexciton binding energies are shown in parentheses.