Fig. 7: The irradiation effect on the reliability performance of MoS2 devices. | npj 2D Materials and Applications

Fig. 7: The irradiation effect on the reliability performance of MoS2 devices.

From: Electron irradiation-induced defects for reliability improvement in monolayer MoS2-based conductive-point memory devices

Fig. 7

a The average DC cycle number for the devices with different radiation doses. The average DC cycles that one device can survive increase from ~6 cycles for unirradiated devices to ~68 cycles as the dose increases to 250 μC/cm2, and then return back to a lower level at higher doses. b The yield for the devices with different radiation doses. The yield increases from ~47% for unirradiated device to ~71% as the dose increases to 250 μC/cm2 and 500 μC/cm2, and then returns back to a lower level at higher doses.

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