Fig. 8: Monte Carlo simulations to illustrate the irradiation effect on reliability.
Representative distribution of sulfur vacancy within the device area with (a) 15 vacancies and (b) 40 vacancies shown in top view. The vacancies are randomly located in the device area. More vacancies will lead to a higher possibility of clusters formation in the film, which is assumed to reduce the yield due to severe leakage through these clusters that short the electrodes through the MoS2. c The calculated yield using Monte Carlo simulation to illustrate two mechanisms that affects device yield: at low radiation dose, yield increases as vacancy number increases due to more (virtual) conductive points formed; at high radiation dose, yield decreases as vacancy number increases due to more clusters formed. d The calculated cycle number using Monte Carlo simulation to illustrate two mechanisms that affect device endurance: at low radiation dose, cycle number increases as conductive point number increases due to more redundant conductive points available; at high radiation dose, cycle number decreases as conductive point number increases due to excessive Joule heating induced by high current.
