Fig. 6: The effect of ex-situ post-implantation annealing on Se-implanted MoS2 ML. | npj 2D Materials and Applications

Fig. 6: The effect of ex-situ post-implantation annealing on Se-implanted MoS2 ML.

From: Low-energy Se ion implantation in MoS2 monolayers

Fig. 6

a Room temperature PL spectrum from as-implanted ML (red line) shows a broadband emission comprising of two peaks Xs and X. The one at lower energy Xs is removed by post-implantation ex-situ annealing at 200 °C (blue line). The remaining higher energy peak X is red-shifted compared to the XT emission line from the measurement before implantation (black line). b Room temperature Raman spectra, which are normalized to A′ peak (of MoS2) to compare the intensities of \(A_{MoSSe}^\prime\).

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