Fig. 5: Application of mediator-grown WS2.
From: Mediator-assisted synthesis of WS2 with ultrahigh-optoelectronic performance at multi-wafer scale
a Comparison of achievable coverage with and without different mediators. b Transconductance of FET fabricated from mediator-grown WS2, (inset) drain-source current-voltage characteristics at different gate voltages. c Current- voltage characteristics of graphite mediator-grown WS2 in dark and illuminated conditions, (inset) photograph of device array. d Power-dependent photoresponsivity, e current response under pulsed light illumination, (inset) closeup of rising flank. f Comparison of device performance to reported values for WS2 (more details and references in Supplementary Table 1).
