Fig. 1: Low-energy electronic structure of single-layer TaSe2.
From: Superconducting dome by tuning through a van Hove singularity in a two-dimensional metal
a Large-scale STM image of monolayer TaSe2/BLG (Vs = 2 V, I = 20 pA). Inset: STM image showing the 3 × 3 CDW (Vt = 0.6 V, I = 100 pA). b B⟂-dependence of the electronic structure of monolayer TaSe2 (T = 0.34 K). The shadowed region indicates the energy range of the inner dip. The width (ω) and depth (d) of this dip are defined with respect to the value at dI/dV(1 mV)). c The evolution of ω and d with B⟂ in monolayer TaSe2. The error bars represent the standard error of the mean. d dI/dV(B⟂ = 0 T) on monolayer TaSe2 (dots) and the DOS ∝ Ln(V) fit within ±1 mV (line).
