Fig. 1: Monolayer WSe2 device structure.
From: Anomalous conductance quantization of a one-dimensional channel in monolayer WSe2
a Schematic of the monolayer WSe2 device structure. b Optical micrograph of the device used in this study. The WSe2 monolayer flake is outlined in red for clarity. Inset: Scanning electron micrograph of the top gate structure (scalebar is 400 nm). The left and right gates are used to activate the contact region (VCG). The top and bottom gates (VSG) are used to form the 1D channel. The 1D channel is lithographically defined to have a width of 200 nm and a length of 600 nm.
