Table 1 Bandgap (eV units) of r-MX2 monolayers calculated using PBE, PBE+SOC, HSE06, HSE06+SOC, and G0W0+SOC.
From: Prediction of BiS2-type pnictogen dichalcogenide monolayers for optoelectronics
r-MX2 monolayer | PBE | PBE +SOC | HSE06 | HSE06 +SOC | G0W0 +SOC |
---|---|---|---|---|---|
AsS2 | 1.25 | 1.17 | 1.92 | 1.91 | 2.01 |
AsSe2 | 0.96 | 0.88 | 1.54 | 1.51 | 2.06 |
AsTe2 | 0.52 | 0.48 | 0.98 | 0.83 | 1.38 |
SbS2 | 1.42 | 1.35 | 2.12 | 2.08 | 2.24 |
SbSe2 | 1.09 | 1.03 | 1.69 | 1.62 | 2.23 |
SbTe2 | 0.65 | 0.63 | 1.10 | 1.00 | 1.57 |
BiS2 | 1.47 | 1.04 | 2.20 | 1.87 | 1.84 |
BiSe2 | 1.17 | 0.76 | 1.81 | 1.45 | 1.82 |
BiTe2 | 0.70 | 0.26 | 1.19 | 0.73 | 0.83 |