Fig. 2: Excitonic properties of atomically thin InSe. | npj 2D Materials and Applications

Fig. 2: Excitonic properties of atomically thin InSe.

From: Monolayer indium selenide: an indirect bandgap material exhibits efficient brightening of dark excitons

Fig. 2

a, b The normalized PL spectra of ML and BL InSe at different temperatures. The PL spectra are shifted vertically for clarity. c, d The temperature dependence of PL intensity of A peak of ML and BL InSe. e Normalized PL spectra of ML InSe taken at 1 W/cm2 and 300 W/cm2. f Excitation power dependence of PL intensities of the A peaks of ML and BL InSe. The black line shows the linear power law fittings, yielding exponents \({\alpha }_{{ML}}\) and \({\alpha }_{{BL}}\) to be very close to unity for ML and BL InSe.

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