Fig. 4
From: Strain-modulated defect engineering of two-dimensional materials
Differences in the formation energy (ΔEf) as functions of biaxial strain ϵ(%) for neutral and charged defects C2 CB, charged defects \({C}_{{{{\rm{2}}}}}\,{C}_{B}^{+1}\) and C2 CN, \({C}_{{{{\rm{2}}}}}\,{C}_{N}^{-1}\) calculated under assumption that the displaced B atoms are incorporated into either strained or original [μB(ϵ = 0%)] h-BN lattice.
