Fig. 2: Si-MRR/InPSe device characterization. | npj 2D Materials and Applications

Fig. 2: Si-MRR/InPSe device characterization.

From: Simultaneous optical power insensitivity and non-volatile wavelength trimming using 2D In4/3P2Se6 integration in silicon photonics

Fig. 2

a A schematic representation of the Si-MRR integrated InPSe phase trimmer. b SEM images of fabricated Si-MRR/InPSe device. The corresponding optical image is shown in the inset. The scale bars are 10 μm. c AFM height profile of the Si-MRR/InPSe device, displaying the blue and white cross-section lines representing the bare Si-MRR and the Si-MRR with the InPSe layer, respectively. The scale bar is 10 µm. d The extracted thickness of the Si-MRR and Si-MRR/InPSe revealed a difference of 30 nm between them.

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