Fig. 3: Optical properties and guided light/InPSe interaction. | npj 2D Materials and Applications

Fig. 3: Optical properties and guided light/InPSe interaction.

From: Simultaneous optical power insensitivity and non-volatile wavelength trimming using 2D In4/3P2Se6 integration in silicon photonics

Fig. 3

a Optical parameters (n and k) of the InPSe extracted from ellipsometry. The inset shows the PL mapping of the flake on Si-MRR. The scale bar is 4 µm. b Guided light-multilayer InPSe interaction: Electric-field profiles (|E|2) of TE mode of bare Si waveguide (top panel) and 30 nm InPSe on Si (bottom panel) at 1550 nm. c The transmission spectra of the MRR without (black) and with (red) the InPSe flake for the TE mode. d Electrical characteristics of the Si-MRR/InPSe device (30 nm) under dark and 532 nm light excitation. The inset shows the dark current of the Si-MRR/InPSe device.

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