Fig. 5: Passive compensation of Si-MRR/InPSe devices. | npj 2D Materials and Applications

Fig. 5: Passive compensation of Si-MRR/InPSe devices.

From: Simultaneous optical power insensitivity and non-volatile wavelength trimming using 2D In4/3P2Se6 integration in silicon photonics

Fig. 5

a Comparison of the transmission spectra of Si-MRR and Si-MRR/InPSe measured for a flake thickness of 30 nm at both low power (0.30 mW) and high power (2.52 mW). b Corresponding spectra were measured for flake thicknesses of 45 nm, 60 nm, and 90 nm. c Corresponding spectra for 120 nm thick flake. d The measured resonance shifts of Si-MRR/InPSe devices vary with different flake thicknesses at various powers. The inset illustrates the measured resonance shift between low (0.35 mW) and high power (2.55 mW) versus the thickness of the InPSe flake.

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