Table 1 A comparison of the thickness-dependent figure of merits of the Si-MRR/InPSe device under passive and active operation configuration
Si- MRR | Si-MRR/30 nm InPSe | Si-MRR/45 nm InPSe | Si-MRR/60 nm InPSe | Si-MRR/90 nm InPSe | Si-MRR/120 nm InPSe | |
|---|---|---|---|---|---|---|
FSR (nm) | 1.88 | 1.91 | 1.91 | 1.92 | 1.93 | 1.94 |
Qloaded | 21.2 × 103 | 9.03 × 103 | 8.5 × 103 | 7.3 × 103 | 8.6 × 103 | 3.9 × 103 |
Qintrinsic | 37.1 × 103 | 16.4 × 103 | 15.09 × 103 | 12.9 × 103 | 14.9 × 103 | 5.8 × 103 |
Loss (dB/cm) | 4.48 | 91.1 | 103.2 | 134.2 | 107.1 | 361.1 |
Resonance Shift (pm)@ 2.52 mW | 70 | 3 | 18.2 | 20.9 | 28.2 | 45.4 |
Electro-optic tuning(pm) (at −10 V) | −5.1 | −23.92 | −26.1 | −28.83 | −44.85 |
