Fig. 10: Flake size and thickness dependent switching behavior in 2D nanosheet network film.

a-c I-V curves of MoS₂ memristors made from suspensions with lateral flake sizes of 0.48 µm, 1.2 µm, and 2.4 µm, respectively. d For d < 500 nm, a thermally activated soft switching is observed with I-V characteristics exhibiting the NDR feature. e For d = 1-2 µm, a volatile RS and thermally activated hard switching are observed. f For d > 4 µm, the bulk conductivity ≈ 0.4 S m⁻¹ and an irreversible and abrupt increase in conduction at V = V_ON is observed corresponding to write-once-read-many memories. g Dependence of lateral flake size on V_set and V_reset voltage. Smaller nanosheets correspond to higher V_s density due to the larger edge to basal plane ratio, resulting in smaller set voltage. h Dependence of flake thickness on the nature of resistive switching. Panel a-c reprint with permission from ref. ³³., Springer Nature Limited. Panel d-f reprint with permission from ref. ¹⁷⁴., Wiley-VCH2021.