Fig. 12: Memtransistors for near-sensor computing.

a Schematic diagram of crossbar array and device structure of memtransistors used in near-sensor computing. The right figure shows the conductance map of a 5 by 5 memtransistor crossbar array, highlighting the mitigation of sneak current using memtransistors. b A fully integrated crypto engine monolithically integrated Internet of Things (IoT) edge sensors with MoS₂-based memtransistors array, which offer all-in-one IoT capability sensing and encoding functionalities. c Memtransistors for reconfigurable synaptic function. d Schematic diagram illustrating the MoS₂ memtransistor channel formed from CVD-grown film with an uneven density of grain boundaries. The figure is accompanied by a false-color image of polycrystalline MoS₂ taken by second harmonic generation microscopy. e Schematic diagram showing a potential memtransistor channel formed from solution-processed film. Regulating flake alignments and flake size distribution allows for enhanced control over edge density and the percolation path of defects. Reprint with permission from ref. ¹⁹⁵. American Chemical Society; Reprint with permission from ref. ¹⁹⁸., Springer Nature Limited. Reprint with permission from ref. ²⁰⁰. Wiley-VCH2023; Reprint with permission from ref. ²⁴⁰. AAAS. Reprint with permission from ref. ³³., Springer Nature Limited.