Fig. 6: Characterization of intra flake properties in solution-processed thin films.

a Schematic representation of nanosheet network as a resistive network comprising of nanosheet resistance (RNS) and junction resistance (RJ). b C-AFM is employed to map the junction resistance via current mapping across the inter-flake junction. c Schematic illustration of optical-pump–THz-probe spectroscopy on 2D material systems. d Photoconductivity dynamics of MoS2 nanosheet using THz pump-probe spectroscopy under different temperatures. Reprinted with permission from ref. 168, American Chemical Society 2011. Reprinted with permission from ref. 169, Wiley-VCH2023.