Table 2 Comparison of different device modelling methods for investigating resistive switching mechanisms in solution-processed memristors
Methods | Spatial scale | Temporal scale | Accuracy | Information |
|---|---|---|---|---|
1–100 nm | Hours-days | High | Diffusion barrier, Band structure, Phonon structure, Formation energy of vacancies | |
0.1–10 µm | 100s-Hours | Medium high | Stochastic vacancy dynamics, IV characteristics | |
Finite Element Methods | 0.1–10 µm | 100s-Hours | Medium low | IV characteristics, defects described by a concentration |
Compact Models | 100 µm- mm | 10s-minutes | Low | Intuitive insight, Enable circuit simulations |
