Fig. 13: The h-BN memristor can be modified by mixing different polymers.

a Ag/PMMA/h-BN/Cu structure diagram¹²⁷. b LRS and HRS distribution for 800 cycles of the device¹²⁷. c Schematic diagram of the mixing of PDA and h-BN (top) and the formation of hot channels inside the film after mixing (bottom)¹²⁸. d Schematic diagram of the resistance switch of the device without PMMA and after PMMA insertion. Ag⁺ and Cu²⁺ enter the single-layer h-BN without PMMA insertion, and the device is difficult to reset to HRS. After insertion, the PMMA layer prevents the formation of Cu wires during reset and effectively controls the growth of conductive wires¹²⁷. e Schematic diagram of Ag/h-BN-PVOH/ITO device structure⁸¹. f Mixing diagram of h-BN and PVOH⁸¹.