Fig. 14: Construct heterogeneous structure to modify h-BN memristor. | npj 2D Materials and Applications

Fig. 14: Construct heterogeneous structure to modify h-BN memristor.

From: Memristors based on two-dimensional h-BN materials: synthesis, mechanism, optimization and application

Fig. 14

a Structure diagram of G/h-BN/G device129. b Optical images of G/h-BN/G devices129. c G/h-BN/G device I–V curves129. d Structure diagram of Ti/MLG/h-BN/MLG/Au device111. e XTEM images of Ti/MLG/h-BN/MLG/Au devices111. f I–V curves of Ti/MLG/h-BN/MLG devices111. g h-BN diagram of growth of single carbon nanotubes and carbon nanotube bundles130. h h-BN /CNT memristor structure diagram130. i Schematic diagram of resistive mechanism of h-BN/CNT memristor130.

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