Table 1 CVD growth parameters of h-BN on different substrates

Sapphire

1100–1300 °C

20-100 Torr

Ammonia, Diborane

2–37 nm h⁻¹

⁹⁰

Ni

1020–1320 °C

LPCVD

Borazine

2–5 layers film

¹⁵⁶

Cu

1000 °C

0.5 Torr

Ammonia- Borane

1.5–10.3 nm film

¹⁵⁷

Pt

746–846 °C

UHV

Borazine

Monolayer film

¹⁵⁸

Fe

1025 °C

Low pressure

Ammonia-Borane

Multilayer islands exhibiting AB stacking.

¹⁵⁹

Rh

776 °C

UHV

Borazine

Monolayer nanomesh film

¹⁶⁰

Ir

726–1026 °C

UHV

Borazine

Monolayer film

¹⁶¹

Ru

1000 °C

UHV

Borazine

Monolayer film

¹⁶²