Fig. 1: BL MoS2 FET - Material and Device Characteristics.
From: Impact ionization and the paradox of defects in transition metal dichalcogenide FETs
a Optical microscope image of a back-gated MoS2 FET with Ni (30 nm)/Au (30 nm) contacts on Bilayer (BL) MoS2 (marked in dashed white lines); Scale bar = 5 μm. Channel Length (LCh) = 3 µm, and Channel Width (WCh) = 2 µm. The CVD-grown BL MoS2 was etched from the unwanted regions using O2 plasma etching. b PL spectrum showing the A exciton, B exciton, and the 10× multiplied Indirect Bandgap (IBG) peaks. c Raman spectrum in the channel region with the insets schematically presenting the origin of the observed peaks in the spectrum. d AFM topography line scan confirming the layer thickness to be of bilayer TMD. e ID-VG confirms n-FET on BL MoS2. The inset shows the schematic of the back-gate FET device structure. f The linear output characteristics of the device suggest a low metal-semiconductor Schottky barrier height at the contacts.
