Fig. 2: The dominance of inelastic resonant tunnelling events and their electric field tuneability. | npj 2D Materials and Applications

Fig. 2: The dominance of inelastic resonant tunnelling events and their electric field tuneability.

From: Inelastic resonant tunnelling through adjacent localised electronic states in van der Waals heterostructures

Fig. 2

a, d, and g, Experimental differential tunnelling conductance maps at \(T=\) 2 \(\,{\rm{K}}\) as a function of bias (\({V}_{{\rm{b}}}\)) and backgate (\({V}_{{\rm{bg}}}\)) voltages at fixed topgate voltages of \({V}_{{\rm{tg}}}=2\,{\rm{V}}\)(a), \({V}_{{\rm{tg}}}\) \(=3\,{\rm{V}}\)(d) and \({V}_{{\rm{tg}}}\) \(=4\,{\rm{V}}\)(g). The tunnelling conductance values are normalized over the cross-sectional area of Device 1 (\(S\approx 20{ \mu }{{\rm{m}}}^{2}\)). b, e, and h, Evaluated differential tunnelling conductance counterplots corresponding to inelastic tunnelling events through states \(A\) and \(B\) (\(B\) and \(A\)) in series as a function of backgate and bias voltages at fixed topgate voltages of \({V}_{{\rm{tg}}}=2\,{\rm{V}}\) (b), \({V}_{{\rm{tg}}}=3\,{\rm{V}}\)(e) and \({V}_{{\rm{tg}}}=4\,{\rm{V}}\)(h). Dashed white lines in (b, e, h) illustrate the alignment of the chemical potential of moiré monolayer graphene with its neutrality point. e, f, and i, illustrate band diagrams corresponding to white dots in (b, e, h) maps, respectively.

Back to article page