Fig. 9: Influence of variations in the Schottky barriers on the read-current based on the example of pulse scheme 1, case 2.
From: High-throughput numerical modeling of the tunable synaptic behavior in 2D MoS2 memristive devices
a Read current as a function of the pulse number for small variations in the left and right Schottky barriers \({\phi }_{0,{\rm{L}}}\) and \({\phi }_{0,{\rm{R}}}\), and b for larger variations in \({\phi }_{0,{\rm{R}}}\), while \({\phi }_{0,{\rm{L}}}=0.1\,{\rm{eV}}\) is kept constant. All simulations use pulse amplitudes of Vset = −5 V and Vres = 4 V.
