Table 1 Semiconductor material parameters and their range of values used in the charge-transport simulations.
From: High-throughput numerical modeling of the tunable synaptic behavior in 2D MoS2 memristive devices
Parameter Name | Symbol | Set 1 | Set 2 | Unit |
|---|---|---|---|---|
Band gap | \({E}_{{\rm{g}}}\) | 1.3 | 1.3 | eV |
Electron affinity | \({\chi }_{{\rm{e}}}\) | 4.0 | 4.0 | eV |
Left Schottky barrier | \({\phi }_{0,{\rm{L}}}\) | 0.001 | 0.001 | eV |
Right Schottky barrier | \({\phi }_{0,{\rm{R}}}\) | 0.001 | 0.001 | eV |
Relative electric permittivity | \({\varepsilon }_{{\rm{r}}}\) | 10 | 10 | 1 |
Image-charge relative electric permittivity | \({\varepsilon }_{{\rm{i}}}\) | 10 | 10 | 1 |
Electron/hole effective mass | \({m}_{{\rm{n}}}^{* }\), \({m}_{{\rm{p}}}^{* }\) | 0.55, 0.77 | 0.55, 0.77 | \(\rm{m}_{0}\) |
Electron/hole mobility | \({\mu }_{{\rm{n}}}\), \({\mu }_{{\rm{p}}}\) | \(2.5\times {10}^{-4}\) | \(0.725\times {10}^{-4}\) | \(\rm{{m}^{2}/({Vs})}\) |
Vacancy mobility | \({\mu }_{{\rm{x}}}\) | \(5\times {10}^{-14}\) | \(1\times {10}^{-14}\) | \(\rm{{m}^{2}/({Vs})}\) |
Intrinsic vacancy energy level | \({E}_{{\rm{x}},0}\) | \(-4.32\) | \(-4.32\) | eV |
Maximum vacancy concentration | \({N}_{{\rm{x}}}\) | \({10}^{28}\) | \({10}^{28}\) | \({{\rm{m}}}^{-3}\) |
Background donor density | C | \({10}^{21}\) | \({10}^{23}\) | \({{\rm{m}}}^{-3}\) |
