Table 4 Geometry parameters used for all simulations with the charge-transport model.
From: High-throughput numerical modeling of the tunable synaptic behavior in 2D MoS2 memristive devices
Parameter Name | Symbol | Set 1 | Set 2 | Unit |
|---|---|---|---|---|
Channel length | \(L\) | 1 | 2 | µm |
Channel width | \(W\) | 10 | µm | |
Channel thickness | \(D\) | 15 | nm | |
