Fig. 3: Photodetection characterisation of FePS3-MoS2 heterostructure.
From: FePS3-MoS2 p-n junctions for broadband optoelectronics
Photocurrent generated (ΔIDS) in (a) MoS2 under 455 nm to 850 nm wavelengths, b FePS3 under 455 nm to 1050 nm wavelengths, and c the heterojunction when illuminated with wavelengths in 455 nm to 660 nm spectral range. All measurements were performed with a drain-source bias (VDS) of 2 V and LED power intensity of 3 mW/cm2. d Illumination power-dependent photoresponsivity of FePS3-MoS2 heterostructure under 455, 565, and 660 nm wavelengths.
