Fig. 5: Excitonic lifetime measurements of FePS3–MoS2 heterostructure.
From: FePS3-MoS2 p-n junctions for broadband optoelectronics

a Comparison of rise time (τrise) between MoS2, FePS3, and across the heterojunction. b Expected Type-II band alignment of multilayered MoS2 and FePS3 heterostructure, where the valence band maximum (EVB) energy levels were extracted from PESA measurements, whilst the conduction band minimum (ECB) was estimated based on the optical band gaps. Excitonic kinetic comparison of MoS2, FePS3, and across the heterojunction at 545 nm (c) without (VDS = 0 V) and d with electrical bias (VDS = 2 V) respectively, where the structure was excited with a 480 nm laser and pump delay of 2.0–2.5 ps.