Table 1 Summary of growth conditions
From: Self-limited monolayer graphene growth on SiC with propane-hydrogen CVD
Series | Growth step | Post growth annealing | Cooling | |
|---|---|---|---|---|
Propane flow | Growth time | |||
Conventional cooling | 10 sccm | 0–15 min | – | H2 + Ar |
Post-growth annealing | 10 sccm | 4 and 15 min | 1 min | H2 + Ar |
Ar cooling (time) | 10 sccm | 0–15 min | – | Ar |
Ar cooling (propane) | 5–50 sccm | 15 min | – | Ar |
Other growth parameters | 1550 °C, 800 mbar, 50% H2 + Ar | 800 mbar | ||
