Table 2 Structure, dimension, mechanism, synaptic characteristics, and energy consumptions for various artificial synapses based on 2D materials that have been reported in recent studies

MoS₂

Memristor

2-terminal

~2

1000

-

7.2/5.4

-

-

+10 / -15

100 us

1

-

¹⁸⁰

h-BN

Memristor

2-terminal

-

-

600 pW

-

3000

-

0.7

10 ns

10^-1

-

¹⁸¹

Ti₃C₂T_x

Memristor

2-terminal

~4.5

15

-

5.1/4.8

60

10⁶

4

10 ms

1

-

⁶⁸

WS₂/ZnO

Memristor

2-terminal

~300

300

0.2 nJ

1.3/-

300

-

1

1 ms

5 × 10^-1

-

¹⁸²

Li_xMoS₂

Memristor

2-terminal

40–50

-

-

-

7000

10⁴

6

1 ms

-

-

¹⁸³

WSe₂

Electrochemical

3-terminal

2

60

30 fJ

2/1.9

5000

-

1.2 /−0.4

100 ms

-

PEO:LiClO₄

¹⁸⁴

Graphene

Electrochemical

3-terminal

7

250

500 fJ

0.6/3.3

45,000

-

50 pA

10 ms

-

PEO:LiClO₄

¹⁹⁰

Graphene /AlO_x

Floating gate

2-terminal

~100

10

0.01–1 fJ

-

6000

-

2.3

100 ns

-

-

¹⁸⁶

MoS₂ /h-BN /graphene

Floating gate

2-terminal

10⁶

2

-

-

10,000

10⁵

6

10 ms

10^-1

-

¹⁸⁷

MoS₂ /h-BN

2D Heterostructure

2-terminal

384 >

-

-

-

1.814.400

-

–15 /–18

0.4 s

-

-

¹⁸⁸

WSe₂

2D Heterostructure

3-terminal

~5

600

66 fJ

1.4/1.4

-

-

0.3

10 ms

-

h-BN

¹¹⁴

BP

2D Heterostructure

3-terminal

1.1

21

-

5.7/3.2

5

-

20

10 ms

^-

PO_x

¹⁸⁹

MoS₂

2D Heterostructure

3-terminal

3

20

64 pJ

2.2/4.2

1000

100

6

2 s

-

Graphene (volatile) /Al₂O₃ (non-volatile)

¹¹⁷

MoS₂

2D Heterostructure

3-terminal

3

12

4.8 pJ

1.2/1.4

7200

-

2

10.5 ms

-

DEME-TFSI

¹⁹⁰