Fig. 2: Atomic structure and local density of states in TaS2/1T-VSe2/TaS2 heterostructures.
From: Tuning of spin-transfer torque in VSe2-based vdW magnetic tunnel junctions by electrode polytypes
a, b Atomic structures of the TaS2/1T-VSe2/TaS2 heterostructure with (a) 1T-TaS2 and (b) 2H-TaS2 electrodes. In the 1T configuration, the interlayer distances between the VSe2 layer and the TaS2 electrodes are 3.57 Å on the 1T-TaS2 side and 3.51 Å on the VSe2 side, whereas in the 2H configuration, both interfaces have a uniform distance of 3.38 Å. c, d Depict the local density of states (LDOS) at the Fermi level for the TaS2 and VSe2 layers for the (c) 1T and (d) 2H configurations. The spin-resolved LDOS (blue for spin-up and red for spin-down) highlights the electronic contributions from each layer. The shaded region in (c, d) corresponds to the LDOS of the 1T-VSe2 layer, emphasizing its contribution to the heterostructure’s electronic properties.
