Fig. 9: Atomic-scale distribution of spin-transfer torque in 1T-VSe2/2H-MoS2/1T-VSe2 junctions with semi-infinite 1T- and 2H-TaS2 electrodes.
From: Tuning of spin-transfer torque in VSe2-based vdW magnetic tunnel junctions by electrode polytypes
a–d Depiction of the atomic-scale distribution of the x- and z-components of the linear-response spin-transfer torque (τx and τz) in 1T-VSe2/2H-MoS2/1T-VSe2 magnetic tunnel junctions sandwiched between semi-infinite TaS2 electrodes. (a, b) correspond to devices with 1T-TaS2 electrodes, while (c, d) correspond to devices with 2H-TaS2 electrodes. The torques are shown for two different magnetization angles between the 1T-VSe2 ferromagnetic layers in the device configurations, θ = 45° in (a, c) and θ = 90° in (b, d). The z-axis represents the position along the device structure, with the spin-transfer torque values distributed across the atomic layers. The inset illustrates the corresponding device structure, showing the layered configuration of TaS2, MoS2, and VSe2. Calculations are performed at zero bias.
