Table 2 Summary of key magnetic properties for the TaS2/1T-VSe2/2H-MoS2/1T-VSe2/TaS2 MTJs with semi-infinite 1T- and 2H-phase TaS2 electrodes at θ = 90°

From: Tuning of spin-transfer torque in VSe2-based vdW magnetic tunnel junctions by electrode polytypes

 

\({{\mathcal{E}}}_{{\rm{MAE}}}[\,\text{meV}\,]\)

α

\({\tau }_{z}^{{\rm{total}}}[\mu \,\text{eV}/\text{V}\,]\)

\(T({{\mathcal{E}}}_{F})\)

A [Å2]

Ic[MA/cm2]

Vc[mV]

1T-device

−0.57

0.0033

− 1561

1.95 × 10−2

11.42

0.79

1.20

2H-device

−0.35

0.16578

− 702

5.06 × 10−3

11.22

14.44

82.65

  1. Listed are the magnetocrystalline anisotropy energy (\({{\mathcal{E}}}_{{\rm{MAE}}}\)) in meV, Gilbert damping factor (α), z-component of the linear-response spin-transfer torque (\({\tau }_{z}^{{\rm{total}}}/{\rm{V}}\)) in μeV/V, total transmission function at the Fermi level (\(T({{\mathcal{E}}}_{F})\)), cross-sectional area (A) in Å2, and the critical values for voltage (Vc) in mV and current density (Ic) in MA/cm2 required for magnetization reversal. These values correspond to configurations where the magnetization directions of the two 1T-VSe2 ferromagnetic layers are perpendicular (θ = 90°) to each other. The table compares these properties for the 1T-phase of TaS2 electrodes (1T-device) and 2H-phase of TaS2 electrodes (2H-device) configurations, highlighting the differences in spin-transfer torque efficiency, magnetization dynamics, and reversal thresholds.
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