Fig. 1: Electrical characteristics of our ambipolar MoSe2 FETs and field intensity estimation used in this study.
From: Unveiling inverse piezoelectricity and field induced nonvolatile strain in 2D TMDs
a Typical transfer characteristics of MoSe2 FETs used in the study. Our devices were ambipolar with distinctive n-type and p-type conduction regimes and OFF current measured at the charge neutrality point. b IDVD family of curves highlighting LF regime below 50 kV/cm and HF regime above 50 kV/cm. Operational fields above 140 kV/cm across drain and source led to catastrophic failure.
