Fig. 3: Evolution of electrical parameters due to LF and HF stressing during 10-6s to 103s.
From: Unveiling inverse piezoelectricity and field induced nonvolatile strain in 2D TMDs
a The electron current increased (~40%) and hole current decreased (~95%) in devices due to stressing, b Threshold voltage (VT) shifted negatively for both electron and hole current branches (~11V, ~5V respectively), c Subthreshold swing (SS) degrades initially and then improves for electron conduction due to LF stressing. SS improves initially and then degrades for hole conduction due to LF stressing. HF stressing improved SS for both electron and hole conduction by ~36% and ~24%, respectively d Electron mobility improved by ~53% and hole mobility degraded by ~86% due to stressing, and e Contact resistance increased for electron conduction and hole conduction by ~445%, and ~532%, respectively. The performance drifts increase over time of operation with higher drifts seen at higher fields.
