Fig. 6: The electrical performance exhibits drift for several hours (sampled every 10 min) after electrical stressing of 600s.
From: Unveiling inverse piezoelectricity and field induced nonvolatile strain in 2D TMDs
a LF stressing induces electrical drifts which take ~3 h to settle. b Attempt of electrical performance recovery of LF stressed devices using vacuum annealing introduces a large hysteresis in performance accompanied by an overshoot in hole conduction. c HF stressing induces large electrical drifts in ~5 h starting with instant suppression of hole conduction branch. d Recovery attempt of HF stressed using vacuum annealing introduces large hysteresis with an overshoot in hole conduction.
