Fig. 4: Electron mobility calculation of the different am-Al₂O₃-WS₂ interface models investigated using the dR/dL method.

a Lowest conduction bands of the sharpcut-x4 super-cell from Fig. 1 along the transport direction x from the zone-center. b Spatially-resolved electrostatic potential extracted in the x-z plane formed by the W atoms for the same sharpcut-x4 super-cell as in (a). c Electrical resistance as a function of the device length (given in terms of repeated super-cell) for the three considered interfaces: sharpcut-x4 (red circles, n=1.6e13 cm⁻²), roughcut (green diamonds, n=1.7e13 cm⁻²), and sharpcut-x6 (blue squares, n=1.8e13 cm⁻²). The dotted lines represent linear fits.