Fig. 7: Electron mobility calculation of WS2-Al2O3 structures with extra encapsulation hBN layers (2 on each side) and H-terminated sapphire. | npj 2D Materials and Applications

Fig. 7: Electron mobility calculation of WS2-Al2O3 structures with extra encapsulation hBN layers (2 on each side) and H-terminated sapphire.

From: Mobility calculation in disordered WS2-Al2O3 stacks from first principles

Fig. 7

a Conduction band of the am-Al2O3-hBN-WS2-hBN-am-Al2O3 stack with the sharpcut-x4 oxide as a function of kx from the zone-center. b Spatially-resolved electrostatic potential modulation extracted in the x-z plane formed by the W atoms of the structure in (a). c Electrical resistance as a function of the device length for the sapphire - WS2 - sapphire (blue squares) and am-Al2O3-hBN-WS2-hBN-am-Al2O3 (red circles) structures from Fig. 6. The dotted lines are linear fits of the data.

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