Table 1 Comparative analysis of sliding ferroelectric materials, including phase, stacking type, number of layers, space/point group, polarization intensity, strategies for breaking inversion symmetry, characterization techniques used

From: Emerging frontiers in two-dimensional sliding ferroelectrics

Material

Phase

Stacking

Number of layers

Space/point group

Polarization intensity

Strategy

Characterization techinique

Ref.

hBN

 

parallel

2

 

P2D = 2.25 (0.37) × 10-12 C m-1

noncentrosymmetric stacking

vertical PFM

25

hBN

 

parallel

2

 

PZ/A = 0.33 Debye/nm2

noncentrosymmetric stacking

KPFM

26

hBN

 

Bernal-type

multi

 

3.01 Debye/nm2

noncentrosymmetric stacking

KPFM, PUND

31

graphene

 

Bernal and rhombohedral

>3

 

0.32 pC/m

noncentrosymmetric stacking

 

37

hBN

  

7/90 nm

  

twist

PFM

38

hBN/graphene

 

rhombohedral

3

 

1.76 μC/cm2

heterostructure

device

39

graphene

 

Bernal

2

 

5 pC/m

 

FTJ

40

MoS2

2H

 

2

 

d33 = 37.54 pm/V

strain

PFM, FTJ, C-AFM

41

MoS2

3 R

rhombohedral

2

P3m1

0.8-1.5 pC/m

photoexcitation

 

42

MoS2/WS2

 

3R-like and 2H-like

2

3 m

d33 = 1.95-2.09 pm/V

heterostructure

PFM

43

MoS2

3 R

rhombohedral

2

C3v

 

stacking

device

44

CCC

   

P21

0.3-0.4 μC/cm2

hybrid crystal

PFM

45

HgI2

   

Cmc21

0.16 μC/cm2

 

theoretical

46

NbI4

   

Cmc21

0.11 μC/cm2

 

theoretical

47

kagome-B2X3 (X = S, Se, Te)

  

2

\(P\bar{6}2m\), P1, P321, Cm, C2

  

theoretical

48

ZrI2

  

2

Pmn21

0.39 μC/cm2

 

theoretical

49

β-ZrI2

   

C1h

  

theoretical

51

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