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RANDOM NUMBER GENERATORS

FinFETs for cryptography

Nature Electronics volume 3, page 732 (2020)Cite this article

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Proc. 2020 IEEE Int. Electron Devices Meeting (in the press); https://ieee-iedm.org/program/

The researchers — who are based at the National Chiao Tung University, the National Central University in Taiwan and the Taiwan Semiconductor Research Institute — integrated a RRAM metal–insulator–metal structure on top of the FinFET gate, creating a device termed a resistive-gate FinFET. The stochasticity of the device originates from the random variations in its drain current. As a non-volatile memory, the resistive-gate FinFET exhibits high write (50 ns) and read (16 ns) speeds, as well as high endurance (107 cycles) and data retention of over one month. As a TRNG, and in standardized randomness tests, the drain current signal of the device could be successfully converted to a random bit stream and the device could generate a unique set of bit streams among a set of chips.

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  1. Nature Electronics https://www.nature.com/natelectron

    Christiana Varnava

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  1. Christiana Varnava
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Correspondence to Christiana Varnava.

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Varnava, C. FinFETs for cryptography. Nat Electron 3, 732 (2020). https://doi.org/10.1038/s41928-020-00521-5

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