Extended Data Fig. 6: Simulated carrier profile and capacitance bias curve.
From: Nanoscale imaging of mobile carriers and trapped charges in delta doped silicon p–n junctions
Simulated carrier profile and capacitance bias curve. a, Calculated carrier concentration (phosphorus doping) below the tip (along the symmetry axis) for various applied voltages for dopant concentration 3×1021cm-3 (orange) and 3×1018cm-3 (red). b, Corresponding simulated C’(V) curve.
