Extended Data Fig. 7: Sensitivity analysis to amount of dopants and lateral resolution.
From: Nanoscale imaging of mobile carriers and trapped charges in delta doped silicon p–n junctions
Sensitivity analysis to amount of dopants and lateral resolution. a, Solid line represents calculated contrast of acceptor dopant delta layer with radius r = 20 µm at 15 nm below the surface as a function of dopant density. Dashed lines show the same for donor doping and varying delta layer radii. The EFM electrical sensitivity is ~1zF/nm for the here used tips (area is marked), it can be improved to 0.3zF/nm using softer tips. b, Lateral resolution as a function of delta layer dopant concentration (other parameters are fixed to h = 15 nm, R = 16 nm, z = 21 nm, f = 1 MHz).
