Extended Data Fig. 8: 2D Finite element model for estimation of the measurement parameters.
From: Nanoscale imaging of mobile carriers and trapped charges in delta doped silicon p–n junctions
2D Finite element model for estimation of the measurement parameters on the lateral resolution. Shown is the electron concentration in the substrate. A 500 nm wide stripe of highly doped phosphorus (3×1020 cm−3) at a depth of 15 nm is moved below the probe. Capacitance and Maxwell-Stress Tensor are calculated.
