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TWO-DIMENSIONAL MATERIALS

A vertical transistor with a sub-1-nm channel

Nature Electronics volume 4, page 325 (2021)Cite this article

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Sub-1-nm vertical field-effect transistors can be created by transferring pre-made metal film contacts onto two-dimensional materials.

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Fig. 1: Sub-1-nm vertical transistors based on MoS2 monolayers.

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Authors and Affiliations

  1. MOE Key Lab of Microsystem and Microstructure, Harbin Institute of Technology, Harbin, China

    Jia Zhang, Feng Gao & PingAn Hu

  2. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, China

    Jia Zhang, Feng Gao & PingAn Hu

Authors
  1. Jia Zhang
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  2. Feng Gao
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  3. PingAn Hu
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Correspondence to PingAn Hu.

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The authors declare no competing interests.

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Zhang, J., Gao, F. & Hu, P. A vertical transistor with a sub-1-nm channel. Nat Electron 4, 325 (2021). https://doi.org/10.1038/s41928-021-00583-z

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