Extended Data Fig. 3: Buffer doping and band diagram of two wafers.
From: Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution
a, SIMS iron (Fe) and carbon (C) profile of wafers A and B; overlaid are simplified doping density profiles subsequently used for the device simulation33 (Supplementary Table 1). Carbon is assumed to be primarily situated on the nitrogen site (CN). b, Unbiased band profile from the device surface into the epilayer on wafer A and wafer B.
