Extended Data Fig. 4: EFISHG measurement in GaN HEMT devices.
From: Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution
a, b, SHG signal (top panel) and reflectance (bottom panel) from source to drain contact of the GaN-on-SiC HEMT in the OFF state (VGS=−6V) under different gate-drain bias voltages VDG for wafer A and wafer B, respectively.
