Extended Data Fig. 5: Quantitative calibration of the electric field Ex extracted from EFISHG measurement.
From: Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution
a, b, Potential difference between source and drain contact, obtained by integrating the electric field Ex, determined from the SHG signal in Extended Data Fig. 4 for wafer A and wafer B, respectively. Insert shows the potential profiles from the source contact edge located at x = 0 µm towards the drain contact edge located at x = 5.5 µm. The proportionality factor α in equation (2) was adjusted to 2.1 for wafer A so that the potential matches the applied VDG, and to 3.4 for wafer B, to match the applied VDG up to 111V.
